View FGA30N120FTD_4507159.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FGA30N120FTD 1200V, 30A Trench IGBT
May 2009
FGA30N120FTD
1200V, 30A Trench IGBT
Features
* Field stop trench technology * High speed switching * Low saturation voltage: VCE(sat) = 1.6V @ IC = 30A * High input impedance
tm
General Description
Using advanced field stop trench technology, Fairchild's 1200V trench IGBTs offer superior conduction and switching performances, and easy parallel operation with exceptional avalanche ruggedness. This device is designed for soft switching applications.
Applications
* Induction heating and Microwave oven * Soft switching applications
C
G TO-3P E
GCE
Absolute Maximum Ratings
Symbol
VCES VGES IC ICM (1) IF PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25oC @ TC = 100 C @ TC = 25 C @ TC = 100oC @ TC = 25 C @ TC = 100 C
o o o o
Ratings
1200 25 60 30 90 30 339 132 -55 to +150 -55 to +150 300
Units
V V A A A A W W
o o o
C C C
Notes: 1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RJC(IGBT) RJC(Diode) RJA
Parameter
Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient
Typ.
-
Max.
0.38 1.2 40
Units
o o o
C/W C/W C/W
(c)2009 Fairchild Semiconductor Corporation FGH30N120FTD Rev. A
1
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Package Marking and Ordering Information
Device Marking
FGA30N120FTD
Device
FGA30N120FTDTU
Package
TO-3PN
Eco Status
RoHS
Packaging Type
Tube
Qty per Tube
30ea
For Fairchild's definition of "green" Eco Status, please visit: http://www.fairchildsemi.com/company/green/rohs_green.html.
Electrical Characteristics of the IGBT
Symbol
Off Characteristics BVCES ICES IGES
TC = 25C unless otherwise noted
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A Collector Cut-Off Current G-E Leakage Current VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V
1200 -
-
1 250
V mA nA
On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 30mA, VCE = VGE IC = 30A, VGE = 15V IC = 30A, VGE = 15V, TC = 125oC 3.5 6 1.6 2.0 7.5 2 V V V
Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz 5140 150 95 pF pF pF
Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate to Emitter Charge Gate to Collector Charge VCE = 600V, IC = 30A, VGE = 15V VCC = 600V, IC = 30A, RG = 10, VGE = 15V, Resistive Load, TC = 125oC VCC = 600V, IC = 30A, RG = 10, VGE = 15V, Resistive Load, TC = 25oC 31 101 198 259 0.54 1.16 1.70 40 127 211 364 0.74 1.63 2.37 208 41 97 1.51 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC
FGH30N120FTD Rev. A
2
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Electrical Characteristics of the Diode
Symbol
VFM trr Irr Qrr
TC = 25C unless otherwise noted
Parameter
Diode Forward Voltage
Test Conditions
IF = 30A TC = 25oC TC = 125oC TC = 25oC TC = 125oC
o
Min.
-
Typ.
1.3 1.3 730 775 43 47 5.9 18.2
Max
1.7 -
Units
V
Diode Reverse Recovery Time IF =30A, Diode Peak Reverse Recovery Current di/dt = 200A/s
ns
TC = 25oC TC = 125 C TC = 25oC TC = 125 C
o
A C
Diode Reverse Recovery Charge
FGA30N120FTD Rev. A
3
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
180 150
Collector Current, IC [A]
Collector Current, IC [A]
17V 15V 12V TC = 25 C
o
Figure 2. Typical Output Characteristics
180
TC = 125 C
o
20V
20V 17V 15V
150 120 90 60
10V
120 90 60 30
12V
10V 9V VGE = 8V
30 0
0 2 4 6 Collector-Emitter Voltage, VCE [V] 8
9V VGE = 8V
0
0
2 4 6 Collector-Emitter Voltage, VCE [V]
8
Figure 3. Typical Saturation Voltage Characteristics
120 100
Collector Current, IC [A]
Common Emitter VGE = 15V
Figure 4. Transfer Characteristics
120 100
Collector Current, IC [A]
Common Emitter VCE = 20V TC = 25 C TC = 125 C
o o
TC = 25 C
o
80 60 40 20 0 0
TC = 125 C
o
80 60 40 20 0 0 5 10 Gate-Emitter Voltage,VGE [V] 15
2 4 Collector-Emitter Voltage, VCE [V]
6
Figure 5. Saturation Voltage vs. Case Temperature at Variant Current Level
3.0
Collector-Emitter Voltage, VCE [V]
Common Emitter VGE = 15V
Figure 6. Saturation Voltage vs. VGE
20
Common Emitter
Collector-Emitter Voltage, VCE [V]
TC = 25 C
o
2.5
60A
16
12
2.0
30A
8
1.5
IC = 10A
4
60A 30A IC = 15A
1.0 25
50 75 100 125 o Collector-EmitterCase Temperature, TC [ C]
0
0
4 8 12 16 Gate-Emitter Voltage, VGE [V]
20
FGH30N120FTD Rev. A
4
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter TC = 125 C
o
Figure 8. Capacitance Characteristics
8000
Cies Common Emitter VGE = 0V, f = 1MHz TC = 25 C
o
Collector-Emitter Voltage, VCE [V]
16
6000
12
Capacitance [pF]
4000
8
Coes
4
60A 30A IC = 15A
2000
Cres
0 0 4 8 12 16 Gate-Emitter Voltage, VGE [V] 20
0 1 10 Collector-Emitter Voltage, VCE [V]
30
Figure 9. Gate charge Characteristics
15
Common Emitter
o
Figure 10. SOA Characteristics
200 100
10s
Gate-Emitter Voltage, VGE [V]
TC = 25 C
12
VCC = 200V 600V 400V
Collector Current, Ic [A]
100s
10
9
1ms 10 ms DC
1
6
3
0.1
*Notes: 1. TC = 25 C 2. TJ = 150 C 3. Single Pulse
o o
0 0 50 100 150 200 Gate Charge, Qg [nC] 250
0.01 1
10 100 1000 3000 Collector-Emitter Voltage, VCE [V]
Figure 11. Turn-on Characteristics vs. Gate Resistance
500
Figure 12. Turn-off Characteristics vs. Gate Resistance
2000
1000
Switching Time [ns]
Switching Time [ns]
td(off)
100
tr Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
tf Common Emitter VCC = 600V, VGE = 15V IC = 30A TC = 25 C TC = 125 C
o o
td(on)
100
10 0 20 40 60 80 100
Gate Resistance, RG []
50 0 20 40 60 Gate Resistance, RG [] 80 100
FGH30N120FTD Rev. A
5
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs. Collector Current
1000
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Figure 14. Turn-off Characteristics vs. Collector Current
1200 1000
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Switching Time [ns]
tr
Switching Time [ns]
TC = 125 C
TC = 125 C tf
100
td(on)
td(off)
10 10
20
30
40
50
100 10
Collector Current, IC [A]
20 30 40 Collector Current, IC [A]
50
Figure 15. Switching Loss vs. Gate Resistance
10
Figure 16. Switching Loss vs. Collector Current
10
Common Emitter VGE = 15V, RG = 10 TC = 25 C
o o
Eoff
Switching Loss [mJ]
Eoff
Switching Loss [mJ]
TC = 125 C
1
Common Emitter VCC = 600V, VGE = 15V Eon IC = 30A TC = 25 C TC = 125 C
o o
1
Eon
0.1
0
20
40 60 80 Gate Resistance, RG []
100
0.1 10
20 30 40 Collector Current, IC [A]
50
Figure 17. Turn off Switching SOA Characteristics
100
Figure 18. Forward Characteristics
100
Collector Current, IC [A]
Forward Current, IF [A]
10
TJ = 125 C TJ = 25 C
o o
10
1
TC = 25 C TC = 125 C
o o
Safe Operating Area
1 1
VGE = 15V, TC = 125 C
o
10
100
1000 2000
0.1 0.0
Collector-Emitter Voltage, VCE [V]
0.5 1.0 Forward Voltage, VF [V]
1.5
FGH30N120FTD Rev. A
6
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Typical Performance Characteristics
Figure 19. Reverse Current
50
Reverse Recovery Currnet, Irr [A] Stored Recovery Charge, Qrr [C]
Figure 20. Stored Charge
20 18 16
200A/s
40
200A/s
14 12 10 8 6 10
di/dt = 100A/s
30
di/dt = 100A/s
20 10
20 30 Forward Current, IF [A]
40
20 30 Forward Current, IF [A]
40
Figure 21. Reverse Recovery Time
1000
Reverse Recovery Time, trr [ns]
800
di/dt = 100A/s
600
200A/s
400 10
20 30 Forward Current, IF [A]
40
Figure 22. Transient Thermal Impedance of IGBT
PDM t1 t2
FGA30N120FTD Rev. A
7
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
Mechanical Dimensions
TO-3PN
FGH30N120FTD Rev. A
8
www.fairchildsemi.com
FGA30N120FTD 1200V, 30A Trench IGBT
TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
tm
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) * FPSTM
F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM
TM
The Power Franchise(R)
tm
PDP SPMTM Power-SPMTM
Saving our world, 1mW /W /kW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SupreMOSTM SyncFETTM (R)
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM
UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
ANTI-COUNTERFEITING POLICY Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Farichild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com, under Sales Support. Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the proliferation of counterfeit parts. Farichild strongly encourages customers to purchase Farichild parts either directly from Fairchild or from Authorized Fairchild Distributors who are listed by country on our web page cited above. Products customers buy either from fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild's quality standards for handing and storage and provide access to Farichild's full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Farichild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative / In Design Definition Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I36
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FGA30N120FTD Rev. A
9
www.fairchildsemi.com

▲Up To Search▲

Price & Availability of FGA30N120FTD

	To Download FGA30N120FTD Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .